jmnic product specification silicon pnp power transistors 2SA1006 2SA1006a 2SA1006b description ? with to-220 package ? complement to type 2sc2336, 2sc2336a,2sc2336b applications ? audio frequency power amplifier ? high frequency power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol param eter conditions va lue unit 2SA1006 -180 2SA1006a -200 v cbo collector-base voltage 2SA1006b open emitter -250 v 2SA1006 -180 2SA1006a -200 v ceo collector-emitter voltage 2SA1006b open base -250 v v ebo emitter-base voltage open collector -5 v i c collector current -1.5 a i cm collector current-peak -3.0 a t a =25 ?? 1.5 p t total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1006 2SA1006a 2SA1006b characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-0.5a; i b =-50ma -1.0 v v besat base-emitter saturation voltage i c =-0.5a ;i b =-50ma -1.5 v i cbo collector cut-off current v cb =-150v ;i e =0 -1 | a i ebo emitter cut-off current v eb =-3v; i c =0 -1 | a h fe-1 dc current gain i c =-5ma ; v ce =-5v 30 h fe-2 dc current gain i c =-150ma ; v ce =-5v 60 320 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 45 pf f t transition frequency i c =-100ma ; v ce =10v 80 mhz ? h fe-2 classifications r q p 60-120 100-200 160-320
jmnic product specification 3 silicon pnp power transistors 2SA1006 2SA1006a 2SA1006b package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
jmnic product specification 4 silicon pnp power transistors 2SA1006 2SA1006a 2SA1006b
jmnic product specification 5 silicon pnp power transistors 2SA1006 2SA1006a 2SA1006b
|
